Advances in Laser Cooling of Semiconductors
نویسندگان
چکیده
Laser cooling in semiconductor structures due to anti-Stokes luminescence is reviewed. Theoretical background considering luminescence trapping and red-shifting, the effect of free carrier and back-ground absorption, Pauli bandblocking, and the temperature-dependence of various recombination mechanisms are discussed. Recent experimental results demonstrating record external quantum efficiencies (EQE) in GaAs/GaInP heterostructures are described, and conditions favorable for the first observation of laser cooling in semiconductors are discussed.
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